TI shows 800VDC data‑center power
Texas Instruments unveiled an 800VDC power architecture for AI data centers at GTC, signaling vendor moves to optimize power delivery for dense AI racks. (x.com)
TI’s reference designs compress the power chain into two stages: an 800 V→6 V isolated bus converter followed by a 6 V→<1 V multiphase buck for GPU core rails. (ti.com)) The 800 V→6 V bus converter uses integrated GaN power stages and achieves a reported peak efficiency of 97.6% with a claimed power density above 2,000 W/in3. (ti.com)) TI’s roadmap lists an 800 V hot‑swap controller for input protection, a 30 kW 800 V AC/DC power supply, and 800 V capacitor‑bank units using EDLC cells rated at roughly 40 W/in3. (marketwirenews.com)) The company emphasizes GaN integration in the high‑voltage stages to raise conversion efficiency and shrink footprint compared with legacy silicon MOSFET approaches. (powerelectronicsnews.com)) TI framed the designs as companion hardware for NVIDIA’s 800 V DC reference ecosystem and scheduled demonstrations during NVIDIA GTC, March 16–19, 2026, including TI’s booth 169. (ti.com)) Included alternative modules in TI’s announcement show a 800 V→12 V bus converter option and system elements intended to eliminate a traditional 48 V intermediate bus, letting single‑rack power paths use fewer conversion steps. (powerelectronicsnews.com))
